RT Journal Article
T1 Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN
A1 Dhar, S.
A1 Kammermeier, T.
A1 Ney, A.
A1 Pérez García, Lucas
A1 Ploog, K. H.
A1 Melnikov, A.
A1 Wieck, A. D.
AB The structural and the magnetic properties of Gd-focused ion-beam-implanted GaN layers are studied. Gd^(3+) ions were uniformly implanted in molecular beam epitaxy  rown GaN layers at room temperature with an energy of 300 keV at doses ranging from 2.4x10^(11) to 1.0x10^(15) cm^(-2) which corresponds to an average Gd concentration range of 2.4x10^(16)-1.0x10^(20) cm^(-3). The implanted samples were not subjected to any annealing treatment. No secondary phase related to Gd was detected by x-ray diffraction in these layers. Magnetic characterization with superconducting quantum interference device reveals a colossal magnetic moment of Gd and ferromagnetism with an order temperature above room temperature similar to that found in epitaxially grown Gd-doped GaN layers. The effective magnetic moment per Gd atom in these samples is, however, found to be an order of magnitude larger than that found in epitaxially grown layers for a given Gd concentration which indicates that the defects play an important role in giving rise to this effect.
PB American Institute of Physics
SN 0003-6951
YR 2006
FD 2006-08-07
LK https://hdl.handle.net/20.500.14352/52143
UL https://hdl.handle.net/20.500.14352/52143
LA eng
NO © 2006 American Institute of Physics.Research funding from the sixth Framework Programme of the EU through the Marie-Curie Excellence Grant, No. MEXT-CT-2004-014195, “MAGLOMAT,” is gratefully acknowledged. One of the authors (L.P.) thanks the Alexander von Humboldt Foundation, Germany for financial support.
NO EU through the Marie-Curie Excellence
NO Alexander von Humboldt Foundation
DS Docta Complutense
RD 20 abr 2025