RT Journal Article
T1 The EL2 trap in highly doped GaAs:Te
A1 Castaldini, A.
A1 Cavallini, A.
A1 Fraboni, B.
A1 Piqueras De Noriega, Francisco Javier
AB We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed.
PB American Institute of Physics
SN 0021-8979
YR 1995
FD 1995-12-01
LK https://hdl.handle.net/20.500.14352/59249
UL https://hdl.handle.net/20.500.14352/59249
LA eng
NO © 1995 American Institute of Physics.This research has been partially supported by the Cooperation Programme “Azione Integrata” between Italy and Spain
DS Docta Complutense
RD 27 abr 2025