TY  - JOUR
AU  - Castaldini, A.
AU  - Cavallini, A.
AU  - Fraboni, B.
AU  - Piqueras de Noriega, Javier
PY  - 1995
DO  - 10.1063/1.360480
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59249
T2  - Journal of Applied Physics
AB  - We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the...
LA  - eng
M2  - 6592
PB  - American Institute of Physics
KW  - Level Transient Spectroscopy
KW  - Electron Traps
KW  - Gaas
KW  - Defect
KW  - Diffusion
KW  - Crystals
KW  - Bulk
TI  - The EL2 trap in highly doped GaAs:Te
TY  - journal article
VL  - 78
ER  -