RT Journal Article
T1 Composition-dependent electronic properties of indium-zinc-oxide elongated microstructures
A1 Bartolomé Vílchez, Javier
A1 Maestre Varea, David
A1 Cremades Rodríguez, Ana Isabel
A1 Amatti, M.
A1 Piqueras De Noriega, Francisco Javier
AB Microrods and hierarchical structures of indium-zinc-oxide (IZO) with different compositions were grown by thermal treatments of mixtures of InN and ZnO powders. In long rods, an increase in Zn content along the growth axis is revealed by energy dispersive spectroscopy. The structures obtained range from Zn-doped indium oxide with a few atomic per cent of Zn, to IZO compounds of the type Zn_kIn_2O_k+3. X-ray photoelectron spectroscopy measurements with spatial resolution show that IZO microstructures degenerate at room temperature, with carrier concentration of the order of 10^20 cm^-3. Electron accumulation has been found for undoped (1 0 0) and (1 1 1) surfaces, whereas depletion of carriers at the surface is observed in IZO samples. The Fermi level position correlates with the Zn concentration at the surface which, taking into account the surface dependence of the ionization potentials, work functions and band gaps, could lead to tunable material properties for device applications. Cathodoluminescence emission intensity is enhanced by the presence of Zn, which induces spectral changes and broadening of the emission band compared with undoped material. The results are discussed in terms of the charge neutrality level and the band structure of the material.
PB Pergamon-Elsevier Science LTD
SN 1359-6454
YR 2013
FD 2013-04
LK https://hdl.handle.net/20.500.14352/33402
UL https://hdl.handle.net/20.500.14352/33402
LA eng
NO © 2012 Acta Materialia Inc. Published by Elsevier Ltd..This work was supported by MICINN (Projects MAT-2009-07882 and CSD-2009-00013) and by UCMBSCH (Group 910146). JB acknowledges financial support from Universidad Complutense de Madrid.
NO MICINN
NO UCM-BSCH
NO Universidad Complutense de Madrid
DS Docta Complutense
RD 17 abr 2025