TY  - JOUR
AU  - Catarino, N.
AU  - Nogales Díaz, Emilio
AU  - Franco, N.
AU  - Darakchieva, V.
AU  - Miranda, S.M.C.
AU  - Méndez Martín, Bianchi
AU  - Alves, E.
AU  - Marques, J.F.
AU  - Lorenz, K.
PY  - 2012
DO  - 10.1209/0295-5075/97/68004
SN  - 0295-5075
UR  - https://hdl.handle.net/20.500.14352/44054
T2  - EPL
AB  - The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, i.e....
LA  - eng
PB  - EPL Association, European Physical Society
KW  - Radiation-Damage
KW  - Crystals
KW  - Nonpolar
TI  - Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
TY  - journal article
VL  - 97
ER  -