RT Journal Article
T1 High pressure sputtering for kigh-k dielectric deposition. Is it worth trying?
A1 San Andrés Serrano, Enrique
A1 Feijoo, Pedro Carlos
A1 Pampillón, María Ángela
A1 Lucía Mulas, María Luisa
A1 Prado Millán, Álvaro Del
AB Our research group studies the deposition of high permittivity dielectrics by a non-standard method: high-pressure sputtering. The dielectrics studied here are gadolinium scandate deposited from dielectric targets, and gadolinium oxide deposited from a metallic target, with an in situ plasma oxidation. The stoichiometric gadolinium scandate presents a slight permittivity boost after annealing, but with gadolinium-rich scandate (grown with an annealing of a nanolaminate) the dielectric shows a high effective permittivity of 21 and no noticeable SiO2 layer at the interface with Si. On the other hand, the stacks fabricated with the metallic Gd target have a SiO2 interface less than 0.7 nm thick that can be further reduced by scavenging with Ti gates. In fact, this scavenging effect is also demonstrated for the first time with indium phosphide substrates, obtaining a low capacitance equivalent thickness of only 2.1 nm.
PB IOP Science
YR 2014
FD 2014-05-01
LK https://hdl.handle.net/20.500.14352/98993
UL https://hdl.handle.net/20.500.14352/98993
LA eng
NO San Andrés, Enrique, et al. «(Invited) High Pressure Sputtering for High-K Dielectric Deposition. Is It Worth Trying». ECS Transactions, vol. 61, n.o 2, marzo de 2014, pp. 27-39. DOI.org (Crossref), https://doi.org/10.1149/06102.0027ecst.
NO Ministerio de Economía y Competitividad (España)
DS Docta Complutense
RD 9 abr 2025