RT Journal Article
T1 Effect of erbium doping on the defect structure of GaSb crystals
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Plaza, J.
A1 Dieguez, E.
AB GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentrations, Er-Sb precipitates form and doping becomes less efficient in suppressing the accepters. In these samples intraionic Er luminescence is observed.
PB IOP Publishing LTD
SN 0268-1242
YR 1998
FD 1998-12
LK https://hdl.handle.net/20.500.14352/58949
UL https://hdl.handle.net/20.500.14352/58949
LA eng
NO © 1998 IOP Publishing Ltd.This work has been supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).
NO DGES
NO CICYT
DS Docta Complutense
RD 17 abr 2025