TY  - JOUR
AU  - Hidalgo Alcalde, Pedro
AU  - Méndez Martín, Bianchi
AU  - Piqueras de Noriega, Javier
AU  - Plaza, J.
AU  - Dieguez, E.
PY  - 1998
DO  - 10.1088/0268-1242/13/12/017
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/58949
T2  - Semiconductor Science and Technology
AB  - GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er...
LA  - eng
M2  - 1431
PB  - IOP Publishing LTD
KW  - Phase Epitaxy
KW  - Cathodoluminescence
KW  - Photoluminescence
KW  - Spectroscopy
KW  - Excitation
TI  - Effect of erbium doping on the defect structure of GaSb crystals
TY  - journal article
VL  - 13
ER  -