TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro del
AU  - San Andrés Serrano, Enrique
PY  - 2003
DO  - 10.1063/1.1592625
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/51128
T2  - Journal of Applied Physics
AB  - We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiNx:H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions...
LA  - eng
M2  - 2642
PB  - American Institute of Physics
KW  - Electron-Cyclotron-Resonance
KW  - Chemical-Vapor-Deposition
KW  - Amorphous-Silicon Nitride
KW  - Level Transient Spectroscopy
KW  - Gate Quality
KW  - Interface Characterization
KW  - Infrared-Spectroscopy
KW  - Optical-Properties
KW  - N-Type
KW  - Devices.
TI  - Rapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP
TY  - journal article
VL  - 94
ER  -