%0 Journal Article
%A Albrecht, M.
%A Cremades Rodríguez, Ana Isabel
%A Krinke, J.
%A Christiansen, S.
%A Ambacher, O.
%A Piqueras De Noriega, Francisco Javier
%A Strunk, H. P.
%A Stutzmann, M.
%T Carrier recombination at screw dislocations in n-type AlGaN layers
%D 1999
%@ 0370-1972
%U https://hdl.handle.net/20.500.14352/58826
%X We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood iri terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.
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