RT Journal Article
T1 Carrier recombination at screw dislocations in n-type AlGaN layers
A1 Albrecht, M.
A1 Cremades Rodríguez, Ana Isabel
A1 Krinke, J.
A1 Christiansen, S.
A1 Ambacher, O.
A1 Piqueras De Noriega, Francisco Javier
A1 Strunk, H. P.
A1 Stutzmann, M.
AB We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative recombination centres. From temperature dependent measurements of the EBIC contrast we find a shallow acceptor state 20 meV above the valence band. The level can be understood iri terms of one-dimensional dislocation bands split off by the dislocation deformation field. In addition piezoelectric potentials play a role.
PB Wiley-V C H Verlag Gmbh
SN 0370-1972
YR 1999
FD 1999-11
LK https://hdl.handle.net/20.500.14352/58826
UL https://hdl.handle.net/20.500.14352/58826
LA eng
NO © 1999 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany.International Conference on Nitride Semiconductors (3. 1999. Montpellier, Francia).
DS Docta Complutense
RD 8 abr 2025