TY  - JOUR
AU  - Albrecht, M.
AU  - Cremades Rodríguez, Ana Isabel
AU  - Krinke, J.
AU  - Christiansen, S.
AU  - Ambacher, O.
AU  - Piqueras De Noriega, Francisco Javier
AU  - Strunk, H. P.
AU  - Stutzmann, M.
PY  - 1999
DO  - 10.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.3.CO;2-B
SN  - 0370-1972
UR  - https://hdl.handle.net/20.500.14352/58826
T2  - Phisica Status Solidibi B-Basic Research
AB  - We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative...
LA  - eng
M2  - 409
PB  - Wiley-V C H Verlag Gmbh
KW  - Chemical-Vapor-Deposition
KW  - Threading-Edge
KW  - Gan Films
KW  - Scattering
TI  - Carrier recombination at screw dislocations in n-type AlGaN layers
TY  - journal article
VL  - 216
ER  -