RT Journal Article T1 Study of the effects of edge morphology on detector performance by leakage current and cathodoluminescence A1 Crocco, J. A1 Bensalah, H. A1 Zheng, Q. A1 Dierre, F. A1 Hidalgo Alcalde, Pedro A1 Carrascal, J. A1 Vela, O. A1 Piqueras de Noriega, Javier A1 Dieguez, E. AB The Vertical Gradient Freeze (VGF) method has been used to grow high resistivity Cadmium Zinc Telluride (CZT) for high energy radiation applications. In this work, the effect of lapping and polishing the lateral edges of planar detectors is studied. Expectations that improved surface morphology of the edges should correlate with reduced surface leakage current are shown to be erroneous. The effect of various types of lateral edge treatments on detector performance was observed before and after each surface modification. Complementary results were obtained using I-V, Cathodoluminescence (CL), and gamma ray response measurements using 133Ba. As a result, a quick and easy method is reported which minimizes leakage current and actually enhances detector performance through the introduction of surface defects. It is demonstrated that the introduction of radiative recombination centers helps reduce surface leakage current in the detector by a factor of up to 200%, depending on the surface treatment. The purpose of this work is to identify material processing steps for fabricating planar devices based on CZT for gamma ray spectroscopy. PB IEEE-Inst Electrical Electronics Engineers Inc SN 0018-9499 YR 2011 FD 2011-08 LK https://hdl.handle.net/20.500.14352/44165 UL https://hdl.handle.net/20.500.14352/44165 LA eng NO [1] H. Yoon et al., “Investigation of the effects of polishing and etching on the quality of Cd1-xZnxTe using spatial mapping techniques,” J. Elect. Mater., vol. 26, no. 6, p. 529, 1997.[2] Z. Zhang et al., “Chemical mechanical polishing and nanomechanics of semiconductor CdZnTe single crystals,” Semicond. Sci. Technol., vol. 23, p. 105023, 2008.[3] R. Singh et al., “Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates,” J. Electron. Mater., vol. 34, no. 6, pp. 885–890, 2005.[4] P. Moravec et al., “Chemical polishing of CdZnTe substrates fabricated from crystals grown by the vertical-gradient freezing method,” J. Elect. Mater., vol. 35, no. 6, pp. 1206–1213, 2006.[5] V. G. Ivanitska et al., “Chemical etching of CdTe in aqueous solutions of H_2O_2-HI-citric acid,” J. Electron. Mater., vol. 36, no. 8, pp. 1021–1023, 2007.[6] Y. Cui, M. Groza, A. Burger, and R. B. James, “Effects of surface processing on the performance of Cd1-xZnxTe radiation detectors,” IEEE Trans. Nucl. Sci., vol. 51, no. 3, pp. 1172–1175, Jun. 2005.[7] M. C. Duff et al., “Effect of surface preparation technique on the radiation detector performance of CZT,” Appl. Surf. Sci., vol. 254, p. 2889, 2008.[8] A. Castaldini et al., “Cathodoluminescence and photoinduced current spectroscopy studies of defects in Cd0.8Zn 0.2Te,” Phys. Rev. B, vol. 54, no. 11, p. 7622, 1996. NO © IEEE-Inst Electrical Electronics Engineers Inc.Manuscript received November 13, 2010; revised March 15, 2011 and May 09, 2011; accepted May 10, 2011. Date of publication June 27, 2011; date of current version August 17, 2011. This work was supported by the COCAE FP7 Project (http://www.cocae.eu). DS Docta Complutense RD 7 may 2024