RT Journal Article
T1 Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
A1 Olea Ariza, Javier
A1 González Díaz, Germán
A1 Pastor Pastor, David
A1 García Hemme, Eric
A1 Caudevilla Gutiérrez, Daniel
A1 Algaidy, S
A1 Pérez-Zenteno, F.
A1 Duarte-Cano, S.
A1 García Hernansanz, Rodrigo
A1 Prado Millán, Álvaro Del
A1 San Andrés Serrano, Enrique
A1 Martil De La Plaza, Ignacio
AB In the scope of supersaturated semiconductors for infrared detectors, we implanted Si samples with Ti at high doses and processed them by rapid thermal annealing (RTA) to recover the crystal quality. Also, for comparative purposes, some samples were processed by pulsed-laser melting. We measured the electronic transport properties at variable temperatures and analyzed the results. The results indicate that, for RTA samples, surface layers with a high Ti concentration have negligible conductivity due to defects. In contrast, the implantation tail region has measurable conductivity due to very high electron mobility. This region shows the activation of a very shallow donor and a deep donor level. While deep levels have been previously reported for Ti in Si, such a shallow level has never been measured, and we suggest that it originates from Ti-Si complexes. Finally, a decoupling effect between the implanted layer and the substrate seems to be present, and a bilayer model is applied to fit the measured properties. The fitted parameters follow the Meyer–Neldel rule. The role of the implantation tails in Si supersaturated with Ti is revealed in this work.
PB IOP Publishing
SN 0268-1242
YR 2022
FD 2022-12-22
LK https://hdl.handle.net/20.500.14352/88773
UL https://hdl.handle.net/20.500.14352/88773
LA eng
NO Se deposita la versión posprint del artículo
NO Comunidad de Madrid
NO ERDF Funds - MICINN
NO European Social Fund (ESF)
NO Ministerio de Ciencia e Innovación (España)
NO Mexican grants program CONACyT
NO Ministry of Education in the Kingdom of Saudi Arabia
DS Docta Complutense
RD 6 oct 2024