RT Journal Article
T1 Composition dependence of cathodoluminescence emission of Al_xGa_(1−x)P
A1 Fernández Sánchez, Paloma
A1 Domínguez-Adame Acosta, Francisco
A1 Piqueras De Noriega, Francisco Javier
A1 Armelles, Gaspar
AB Cathodoluminescence of AlxGa1−xP has been investigated for x between 0.10 and 0.53. A band corresponding to the 610 nm band of pure GaP has been found to shift to higher energies with increasing x. The position of a red band centred at 690 nm is independent of x.
PB Pergamon-Elsevier Science LTD
SN 0038-1098
YR 1990
FD 1990
LK https://hdl.handle.net/20.500.14352/59295
UL https://hdl.handle.net/20.500.14352/59295
NO Fernández, P., et al. «Composition Dependence of Cathodoluminescence Emission of AlxGa1−xP». Solid State Communications, vol. 76, n.o 2, octubre de 1990, pp. 195-96. DOI.org (Crossref), https://doi.org/10.1016/0038-1098(90)90541-I.
NO © Pergamon-Elsevier Science LTD
DS Docta Complutense
RD 17 ago 2024