RT Book, Section
T1 A low noise 2-20 GHz feedback MMIC-amplifier
A1 Zirath, Herbert
A1 Sakalas, Paulius
A1 Miranda Pantoja, José Miguel
AB A low noise feedback MMIC-amplifier based on a 180 GHz f(max) PHEMT-technology is described. The gain input and output reflection coefficient, de-power consumption, and noise parameters are investigated theoretically and experimentally as a function of dc-bias and frequency. The noise figure is typically 2.5 dB with an associate gain of 22 dB across the 2-20 GHz frequency range. The circuit area is less than 1 mum(2) and the de-power consumption is lower than 100 mW.
PB IEEE
SN 0-7803-6281-0
YR 2000
FD 2000
LK https://hdl.handle.net/20.500.14352/60816
UL https://hdl.handle.net/20.500.14352/60816
LA eng
NO [1] Process DOlPH from Philips Micronde Limed.[2] G. Gonzales, Microwave amplifiers, Prentice Hall.[3] M. García, N. Rorsman, K. Yhland, H. Zirath, I. Angelov, "Fast, Automatic and Accurate WET Small-Signal Characterization", Microwave Journal, July 1997, pp. 102-117.[4] M. W. Pospieszakki, "Modeling of Noise Paramaters of MESFETs and MODFET and their Frequency and Temperam Dependence", IEEE Trans. on MTT, vol 37 no 9,1989, pp. 1340-1350.[5] J. M. Miranda, H. Zirath, J. L. Sebastián, "Noise modelling of 0.15 pm gate length HFETs based on hGaAs channels", submitted to the GHz 2000 Symposium, March 2000, Goteborg, Sweden.[6] MNS, Hewlett-Packard Microwave Nonlinear Simulator (7th release), HP Part No.85150-90220, manual 4-th edition, printed in U.S.A., HP EEsof Division, 1400 Foutaingrove Parkway, Santa Rosa, CA 95403, U.S.A., 1996).
NO IEEE Radio Frequency Integrated Circuits (RFIC) Symposium(2000. Boston, USA). © 2000 IEEE. The Swedish Foundation for Strategic research, SSF, and Chalmers Center for high speed Electronics, CHACH, is acknowledged for the funding of this project
NO Swedish Foundation for Strategic research, SSF
NO Chalmers Center for high speed Electronics, CHACH
DS Docta Complutense
RD 5 may 2024