RT Journal Article
T1 Growth and characterization of CuxAg1-xInSe2 thin films by pulsed laser deposition
A1 Gremenok, Valery
A1 Bodnar, Ivan
A1 Martil De La Plaza, Ignacio
A1 Martines, F.L.
A1 Sergeev-Nekrasov, Sergei
A1 Victorov, I.A.
AB We report on structural and optical measurements made on thin films of the quaternary compounds CuxAg1-xInSe2(x = 0; 0.3; 0.5; 0.7; 1.0). The films were prepared by pulsed laser deposition (PLD) of prereacted material onto glass substrates. The substrate temperature was about 450-480 degrees C. The beam of a Nd:YAG laser was directed onto a rotating target. The resulting films were characterized by XRD, SEM, and EDAX, The films were single phase, polycrystalline and stoichiometric within 4 %. The refractive index n and the absorption coefficient alpha of CuxAg1-xInSe2 thin films were obtained by measuring the transmittance (T) and reflectance (R) in the photon energy range from 0.4 to 2.5 mu m. The optical properties were determined from rigorous expression for the transmission and reflection in an air/film/glass substrate/air multilayer system. The films had high optical absorption about 10(4) - 10(5) cm(-1) and the band gaps of 0.99 eV (CuInSe2) and 1.25 eV (AgInSe2). The energy gaps observed in laser-deposited CuxAg1-xInSe2 thin films near and above the fundamental absorption edge exhibit a nonlinear composition dependence.
PB Trans Tech-Scitec Publications LDT
SN 1012-0394
YR 1999
FD 1999
LK https://hdl.handle.net/20.500.14352/59290
UL https://hdl.handle.net/20.500.14352/59290
NO Gremenok, V. F., et al. «Growth and Characterization of CuxAg1-xInSe2 Thin Films by Pulsed Laser Deposition». Solid State Phenomena, vol. 67-68, abril de 1999, pp. 361-66. DOI.org (Crossref), https://doi.org/10.4028/www.scientific.net/SSP.67-68.361.
NO © Trans. Tech. Publications Ltd.
DS Docta Complutense
RD 23 ene 2026