%0 Journal Article
%A Puebla, Sergio
%A Pucher, Thomas
%A Rouco Gómez, Víctor
%A Sánchez Santolino, Gabriel
%A Xie, Yong
%A Zamora Castro, Víctor
%A Cuéllar Jiménez, Fabian Andrés
%A Mompean, Federico
%A León Yebra, Carlos
%A Island, Joshua O.
%A García Hernández, Mar
%A Santamaría Sánchez-Barriga, Jacobo
%A Munuera, Carmen
%A García Hernández, Mar
%A Castellanos Gómez, Andrés
%T Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors
%D 2022
%@ 1530-6984
%U https://hdl.handle.net/20.500.14352/72633
%X We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO_3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-kappa gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO_2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.
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