RT Journal Article
T1 Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors
A1 Puebla, Sergio
A1 Pucher, Thomas
A1 Rouco Gómez, Víctor
A1 Sánchez Santolino, Gabriel
A1 Xie, Yong
A1 Zamora Castro, Víctor
A1 Cuéllar Jiménez, Fabian Andrés
A1 Mompean, Federico
A1 León Yebra, Carlos
A1 Island, Joshua O.
A1 García Hernández, Mar
A1 Santamaría Sánchez-Barriga, Jacobo
A1 Munuera, Carmen
A1 García Hernández, Mar
A1 Castellanos Gómez, Andrés
AB We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO_3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-kappa gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO_2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.
PB American  Chemical Society
SN 1530-6984
YR 2022
FD 2022-09-15
LK https://hdl.handle.net/20.500.14352/72633
UL https://hdl.handle.net/20.500.14352/72633
LA eng
NO © 2022 The Authors. Published by American Chemical SocietyEuropean Research Council (ERC) through the project 2DTOPSENSE (GA 755655) European Union’s Horizon 2020 research and innovation program (Graphene Core2-Graphenebased disruptive technologies and Grant Agreement 881603 Graphene Core3-Graphene-based disruptive technologies) EUFLAG-ERA through the project To2Dox (JTC-2019-009) Comunidad de Madrid through the project CAIRO-CM project (Y2020/NMT-6661) Spanish Ministry of Science and Innovation through the projects PID2020-118078RBI00, RTI2018 099054-J-I00 and IJC2018-038164-I, PRE2018-084818 Key Research and Development Program of Shaanxi (Program No.2021KW-02).
NO Unión Europea. H2020
NO Ministerio de Ciencia e Innovación (MICINN) / FEDER
NO Ministerio de Ciencia e Innovación (MICINN) / FSE PRE2018-084818
NO Ministerio de Ciencia e Innovación (MICINN)
NO Comunidad de Madrid
DS Docta Complutense
RD 8 may 2024