TY  - JOUR
AU  - Puebla, Sergio
AU  - Pucher, Thomas
AU  - Rouco Gómez, Víctor
AU  - Sánchez Santolino, Gabriel
AU  - Xie, Yong
AU  - Zamora Castro, Víctor
AU  - Cuéllar Jiménez, Fabian Andrés
AU  - Mompean, Federico
AU  - León Yebra, Carlos
AU  - Island, Joshua O.
AU  - García Hernández, Mar
AU  - Santamaría Sánchez-Barriga, Jacobo
AU  - Munuera, Carmen
AU  - García Hernández, Mar
AU  - Castellanos Gómez, Andrés
PY  - 2022
DO  - 10.1021/acs.nanolett.2c02395
SN  - 1530-6984
UR  - https://hdl.handle.net/20.500.14352/72633
T2  - Nano letters
AB  - We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO_3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-kappa gate dielectric effectively...
LA  - eng
M2  - 7457
PB  - American  Chemical Society
KW  - Field-effect transistors
KW  - MoS_2
KW  - Graphene
KW  - Heterostructures
KW  - Freestanding complex oxide
KW  - Ferroelectric perovskite oxide
KW  - Ferroelectric field effect transistor
KW  - Molybdenum disulfide (MoS_2)
KW  - Barium titanate (BaTiO_3)
TI  - Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors
TY  - journal article
VL  - 22
ER  -