TY  - JOUR
AU  - González Díaz, Germán
AU  - Martil De La Plaza, Ignacio
AU  - Prado Millán, Álvaro Del
PY  - 1999
DO  - 10.1116/1.582110
SN  - 0734-2101
UR  - https://hdl.handle.net/20.500.14352/59269
T2  - Journal of vacuum science & technology a: Vacuum surfaces and films
AB  - We analyze the influence of rapid thermal annealing on Al/SiNx:H/Si structures with a nitrogen to silicon ratio of 1.55 in the insulator bulk. The SiNx:H is deposited by the electron cyclotron resonance plasma method and the films were annealed at...
M2  - 1280
PB  - AVS Amer. Inst. Physics
KW  - Chemical-Vapor-Deposition
KW  - Amorphous-Silicon Nitride
KW  - Low-Temperature
KW  - Si-SiO2 Interfaces
KW  - Dielectrics
KW  - Nitrogen
KW  - Hydrogen
KW  - Defects
KW  - Centers.
TI  - Thermal stability of a-SiNx: H films deposited by plasma electron cyclotron resonance
TY  - journal article
VL  - 17
ER  -