RT Book, Section
T1 Noise performance of submicron HEMT channels under low power consumption operation
A1 Miranda Pantoja, José Miguel
A1 Sebastián Franco, José Luis
AB We have investigated the noise performance of HEMT devices for low noise operation with the aim of developing a noise model valid for low power biasing. Analytical expressions useful for CAD models have been derived for the calculation of the Pospieszalski gate and drain temperatures, and have been verified from near pinchoff conditions up to usual bias voltages. An overshoot in the drain temperature as a function of the drain voltage has been observed at low drain currents in deep submicron gate lenght devices.
PB IEEE
SN 0-7803-5687-X
YR 2000
FD 2000
LK https://hdl.handle.net/20.500.14352/60815
UL https://hdl.handle.net/20.500.14352/60815
LA eng
NO IEEE MTT-S International Microwave Symposium (IMS2000) (2000. Boston, USA). © 2000 IEEE. This work has partially been funded by the Swedish Foundation for Scientific Research through the project "Design of 60 GHz WLANs". Paulius Sakalas, Christian Fager, and Ilcho Angelov are acknowledged for their valuable comments.
NO Swedish Foundation for Scientific Research
DS Docta Complutense
RD 7 abr 2025