TY  - JOUR
AU  - Panin, G.
AU  - Piqueras de Noriega, Javier
AU  - Sochinskii, N. V.
AU  - Dieguez, E.
PY  - 1996
DO  - 10.1016/S0921-5107(96)01721-7
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/59215
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - The origin and spatial distribution of radiative defects in undoped and Ge-doped CdTe wafers have been studied by CL spectroscopy and imaging techniques in the scanning electron microscope (SEM) before and after the wafer annealing in HgI2 vapor. The...
LA  - eng
M2  - 277
PB  - Elsevier Science Sa
KW  - Cadmium Telluride
KW  - P-Cdte
KW  - Crystals
KW  - Wafers
TI  - Cathodoluminescence study of the effect of annealing in HgI_2 vapor on the defect structure of CdTe
TY  - journal article
VL  - 42
ER  -