RT Journal Article
T1 Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics
A1 Castro, Mario
A1 Domínguez-Adame Acosta, Francisco
A1 Sánchez, A.
A1 Rodriguez, T.
AB We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain-size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to a certain degree of crystallinity of the amorphous phases during deposition, or more generally, to impurities or roughness of the substrate.
PB Amer Inst Physics
SN 0003-6951
YR 1999
FD 1999-10-11
LK https://hdl.handle.net/20.500.14352/59360
UL https://hdl.handle.net/20.500.14352/59360
LA eng
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NO © 1999 American Institute of Physics. The authors wish to thank A. Rodríguez, J. Olivares, and C. Ballesteros for stimulating discussions on experimental issues, and E. Maciá for helpful comments. This work has been supported by CAM under Project No. 07N/0034/98 (M.C. and F.D.-A.), by DGES under Project No. PB96-0119 (A.S.), and by Contract No. MAT96-0438 (T.R.).
NO CAM
NO DGES
DS Docta Complutense
RD 6 may 2024