TY  - JOUR
AU  - Lucía Mulas, María Luisa
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
AU  - Feijoo, P.C.
AU  - Toledano-Luque, M.
PY  - 2010
DO  - 10.1063/1.3354096
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/44401
T2  - Journal of Applied Physics
AB  - Scandium oxide (ScO(x)) thin layers are deposited by high-pressure sputtering (HPS) for physical and electrical characterization. Different substrates are used for comparison of several ScO(x)/Si interfaces. These substrates are chemical silicon oxide...
LA  - eng
PB  - American Institute of Physics
KW  - Electron-Cyclotron-Resonance
KW  - High-K
KW  - Hafnium Oxide
KW  - Thin-Films
KW  - Dielectrics
KW  - Absorption
KW  - TiO2.
TI  - Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties
TY  - journal article
VL  - 107
ER  -