%0 Journal Article
%A Caudevilla Gutiérrez, Daniel
%A Berencen, Y.
%A Algaidy, Sari
%A Zenteno Pérez, Francisco
%A Olea Ariza, Javier
%A San Andrés Serrano, Enrique
%A García Hernansanz, Rodrigo
%A del Prado Millán, Álvaro
%A Pastor Pastor, David
%A García Hemme, Eric
%T Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization
%D 2021
%@ 2643-1300
%U https://hdl.handle.net/20.500.14352/8507
%X Germanium hyperdoped with deep level donors,such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use acombination of non-equilibrium techniques to supersaturate Ge with Te via ion implantation followed by pulsed laser melting (PLM). Typically, liquid N2 (77K) temperatures are used to avoid implantation-induced Ge surface porosity. In this work, alternatively, we report on the use of slightly higher implantation temperatures (143 K) together with an amorphous Si (a-Si) capping layer. We demonstrate that the solid solubility limit of Te in Ge is overcome upon recovering the crystallinity of the material after laser processing.
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