TY  - JOUR
AU  - Caudevilla Gutiérrez, Daniel
AU  - Berencen, Y.
AU  - Algaidy, Sari
AU  - Zenteno Pérez, Francisco
AU  - Olea Ariza, Javier
AU  - San Andrés Serrano, Enrique
AU  - García Hernansanz, Rodrigo
AU  - Prado Millán, Álvaro Del
AU  - Pastor Pastor, David
AU  - García Hemme, Eric
PY  - 2021
DO  - 10.1109/CDE52135.2021.9455720
SN  - 2643-1300
UR  - https://hdl.handle.net/20.500.14352/8507
T2  - 2021 13th Spanish Conference on Electron Devices (CDE)
AB  - Germanium hyperdoped with deep level donors,such as tellurium, would lead to dopant-mediated sub-band gap mid-infrared photoresponse at room temperature. We use acombination of non-equilibrium techniques to supersaturate Ge with Te via ion...
LA  - eng
M2  - 1
PB  - IEEE
KW  - Ion implantation
KW  - PLM
KW  - Germanium
KW  - Tellurium
KW  - Capping layer
TI  - Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization
TY  - journal article
ER  -