RT Journal Article
T1 Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography
A1 Hidalgo Alcalde, Pedro
A1 Ottaviani, L.
A1 Idrissi, H.
A1 Lancin, M.
A1 Martinuzzi, S.
A1 Pichaud, B.
AB Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC. The (11 (2) over bar0)-oriented 4H-SiC bulk wafers are particularly investigated, due to some advantages with respect to the (0001)-Si face. One of these advantages is a better crystal reordering during post-implantation annealing. In this paper cathodoluminescence (CL) and X-Ray topography measurements have been carried out in order to investigate the optical and structural properties of commercial (11 (2) over bar0) 4H n(+)-type substrates.
PB E D P Sciences
SN 1286-0042
YR 2004
FD 2004-07
LK https://hdl.handle.net/20.500.14352/51058
UL https://hdl.handle.net/20.500.14352/51058
NO © E D P SciencesInternational Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10). (10. 2003. Batz sur Mer, Francia).
DS Docta Complutense
RD 17 abr 2025