TY  - JOUR
AU  - Hidalgo Alcalde, Pedro
AU  - Ottaviani, L.
AU  - Idrissi, H.
AU  - Lancin, M.
AU  - Martinuzzi, S.
AU  - Pichaud, B.
PY  - 2004
DO  - 10.1051/epjap:2004100
SN  - 1286-0042
UR  - https://hdl.handle.net/20.500.14352/51058
T2  - European Physical Journal-Applied Physics
AB  - Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC....
M2  - 231
PB  - E D P Sciences
KW  - Growth
KW  - Layers
KW  - Face
TI  - Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography
TY  - journal article
VL  - 27
ER  -