RT Journal Article
T1 Time-Dependent Electromigration Modeling for Workload-Aware Design-Space Exploration in STT-MRAM
A1 Mayahinia, Mahta
A1 Tahoori, Mehdi
A1 Komalan, Manu Perumkunnil
A1 Zahedmanesh, Houman
A1 Croes, Kristof
A1 Marinelli, Tommaso
A1 Gómez Pérez, José Ignacio
A1 Evenblij, Timon
A1 Kar, Gouri Sankar
A1 Catthoor, Francky
AB Electromigration (EM) has been known as a reliability threatening factor for back-end-of-the-line interconnects. Spin Transfer Torque Magnetic RAM (STT-MRAM) is an emergingnon-volatile memory that has gained a lot of attention in recent years. However, relatively large operational current magnitude is a challenge for this technology, and hence, EM can be a potential reliability concern, even for the signal lines of this memory. A workload-aware EM modeling needs to capture time-dependent current density in the memory signal lines, and to be able to predict the effect of the EM phenomenon on the interconnect for its entire lifetime. In this work, we present methods to effectively model the workload-dependent EM-induced mean time to failure (MTTF) in typical STT-MRAM arrays under a variety of realistic workloads. This allows performing the design space exploration to co-optimize reliability and other design metrics.
SN 0278-0070
YR 2022
FD 2022
LK https://hdl.handle.net/20.500.14352/97882
UL https://hdl.handle.net/20.500.14352/97882
LA eng
DS Docta Complutense
RD 1 sept 2024