TY  - JOUR
AU  - Mayahinia, Mahta
AU  - Tahoori, Mehdi
AU  - Komalan, Manu Perumkunnil
AU  - Zahedmanesh, Houman
AU  - Croes, Kristof
AU  - Marinelli, Tommaso
AU  - Gómez Pérez, José Ignacio
AU  - Evenblij, Timon
AU  - Kar, Gouri Sankar
AU  - Catthoor, Francky
PY  - 2022
DO  - 10.1109/TCAD.2022.3158249
SN  - 0278-0070
UR  - https://hdl.handle.net/20.500.14352/97882
T2  - IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
AB  - Electromigration (EM) has been known as a reliability threatening factor for back-end-of-the-line interconnects. Spin Transfer Torque Magnetic RAM (STT-MRAM) is an emerging non-volatile memory that has gained a lot of attention in recent years....
LA  - eng
M2  - 5327
KW  - Workload-aware studies
KW  - Memory reliability
KW  - Electromigration
KW  - STT-MRAM
TI  - Time-Dependent Electromigration Modeling for Workload-Aware Design-Space Exploration in STT-MRAM
TY  - journal article
VL  - 41
ER  -