TY  - JOUR
AU  - Khanal, G. M.
AU  - Acciarito, S.
AU  - Cardarilli, G.C.
AU  - Chakraborty, A.
AU  - Nunzio, L.D.
AU  - Fazzolari, R.
AU  - Cristini, A.
AU  - Re, M.
AU  - Susi, Gianluca
PY  - 2017
DO  - 10.1049/el.2016.3655
SN  - 0013-5194
UR  - https://hdl.handle.net/20.500.14352/117281
T2  - Electronics Letters
AB  - A zinc oxide (ZnO)-reduced graphene oxide (rGO) composite thin film memristive device is reported. Further, it has been shown that it is possible to implement Hebbian learning rules like, the spike-timing-dependent plasticity, using this device....
LA  - eng
M2  - 296
PB  - Wiley
KW  - Graphene
KW  - Zinc compounds
KW  - II-VI semiconductors
KW  - Wide band gap semiconductors
KW  - Thin film resistors
KW  - Memristors
KW  - Composite materials
KW  - Switching circuits
KW  - Hebbian learning
KW  - Printed circuits
KW  - Synaptic behaviour
KW  - Composite thin film memristor
KW  - Composite thin film memristive device
KW  - Memristive-resistive switching device
KW  - Hebbian learning rule
KW  - Spike-timing-dependent plasticity
KW  - PCB
KW  - Biological spike firing scheme
KW  - Neuromorphic circuit application
KW  - ZnO-CO
TI  - Synaptic behaviour in ZnO–rGO composites thin film memristor
TY  - journal article
VL  - 53
ER  -