%0 Journal Article
%A Martil De La Plaza, Ignacio
%A González Díaz, Germán
%A Prado Millán, Álvaro Del
%A San Andrés Serrano, Enrique
%T Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
%D 2003
%@ 0957-4522
%U https://hdl.handle.net/20.500.14352/51136
%X In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor deposition method. C-V results show that samples without SiO2 have more defects than those with SiO2. Deep-level transient spectroscopy and conductance transient measurements demonstrate that as for the samples containing the SiO2 film, these defects are mostly concentrated in the insulator/semiconductor interface, whereas in the other case defects are spatially distributed into the insulator.
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