TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro del
AU  - San Andrés Serrano, Enrique
PY  - 2003
DO  - 10.1023/A:1023907508286
SN  - 0957-4522
UR  - https://hdl.handle.net/20.500.14352/51136
T2  - Journal of Materials Science: Materials in Electronics
AB  - In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor...
LA  - eng
M2  - 287
PB  - Kluwer Academic Publ.
KW  - Insulator-Semiconductor Structures
KW  - Conductance Transient Techniques
KW  - C-V
KW  - Al/SiNx
KW  - Plasma
KW  - H/InP
KW  - Deposition
KW  - Quality
KW  - DLTS.
TI  - Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
TY  - journal article
VL  - 14
ER  -