RT Journal Article
T1 Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates
A1 Plaza, J. L.
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
A1 Dieguez, E.
AB In this work several changes induced by polishing, chemical etching and thermal treatment in the properties of Er- and Nd-doped GaSb substrates with different doping levels grown by the vertical Bridgman method have been studied. The analysis has revealed the formation of precipitates at the highest doping levels for both Er- and Nd-doped GaSb. Cathodoluminescence analysis shows the reduction of the defect band induced by the rare earth (RE) elements. For high dopant concentrations the precipitation phenomena reduce this effect. Thermal treatments have produced an enhancement of the p-type properties of the samples. For a dopant density of 2 x 10(19) cm(-3) this effect is more pronounced.
PB Elsevier Science SA
SN 0921-5107
YR 2000
FD 2000-02-14
LK https://hdl.handle.net/20.500.14352/58938
UL https://hdl.handle.net/20.500.14352/58938
LA eng
NO [1] S. Coffa, A. Polman, R.N. Schwartz, Rare Earth Doped Semiconductors II, MRS Symposium Proceedings 422, Materials Research Society, Pittsburg, 1996.[2] A.R. Zanatta, L.A.O. Nunes, Appl. Phys. Lett. 71 (25) (1997) 3679.[3] L.F. Zakharenkov, V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, M.A. Sokolova, Sov. Phys. Semicond. 15 (1981) 946.[4] V.A. Kasatkin, F.P. Kesamanly, V.G. Makarenkov, V.F. Masterov, B.E. Samorukov, Sov. Phys. Semicond. 14 (1980) 1092.[5] V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, Sov. Phys. Semicond. 15 (1981) 352.[6] H. Ennen, J. Schneider, J. Electron. Mater. 14A (1985) 115.[7] P. Hidalgo, B.Méndez, J. Piqueras, J. Plaza, E. Diéguez, Semicond. Sci. Technol. 13 (1998) 1431.[8] T.J. Zhang, S.Y. Li, Solid State Electron. 29 (1986) 775.[9] P.S. Dutta, K.S. Koteswara Rao, H.L. Bhat, K. Gopalakrihna Naik, V. Kumar, J. Cryst. Growth 155 (1995) 3702.[10] M.E. Mullen, B. Lüthi, P.S. Wang, E. Bucher, L.D. Longinotti, J.P. Maita, Phys. Rev. B 10 (1974) 1.[11] M. Ichimura, K. Higuchi, Y. Hattori, T. Wada, N. Kitamura, J. Appl. Phys. 68 (1990) 6153.[12] J.L. Plaza, P. Hidalgo, B. Méndez, J. Piqueras, J.L. Castanño, E. Diéguez, J. Cryst. Growth 198 (1999) 379.[13] B. Méndez, J. Piqueras, P.S. Dutta, E. Die´guez, Appl. Phys. Lett. 67 (1995) 2648.
NO © 2000 Elsevier Science S.A.Symposium F: Process Induced Defects in Semiconductors (1999. Estrasburgo, Francia)This work has been supported by CICYT under the project ESP-98 1340.
NO CICYT
DS Docta Complutense
RD 18 ago 2024