RT Journal Article
T1 Transport in random quantum dot superlattices
A1 Gómez, I.
A1 Díez Alcántara, Eduardo
A1 Domínguez-Adame Acosta, Francisco
A1 Orellana, P. A.
AB We present a model based on the two-dimensional transfer matrix formalism to calculate single-electron states in a random wide-gap semiconductor quantum dot superlattice. With a simple disorder model both the random arrangement of quantum dots (configurational disorder) and the spatial inhomogeneities of their shape (morphological disorder) are considered. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic electron scattering by disorder.
PB American Institute of Physics
SN 0021-8979
YR 2002
FD 2002-10-15
LK https://hdl.handle.net/20.500.14352/59350
UL https://hdl.handle.net/20.500.14352/59350
LA eng
NO © 2002 American Institute of Physics.Work in Madrid was supported by DGI-MCyT (Project No. MAT2000-0734) and CAM (Project No. 07N/0075/ 2001). P. Orellana would like to thank Milenio ICM P99-135-F and Cátedra Presidencial de Ciencias for financial support. The authors would like to thank Andrei Malishev for comments on the manuscript.
NO DGI-MCyT
NO CAM
NO Milenio ICM
NO Cátedra Presidencial de Ciencias
DS Docta Complutense
RD 10 abr 2025