%0 Book Section
%T Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques
publisher IEEE
%D 2001
%U 0-7803-6646-8
%@ https://hdl.handle.net/20.500.14352/60814
%X This paper presents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and Noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting the parasitic elements of the small signal equivalent circuit.
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