RT Book, Section
T1 Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques
A1 Miranda Pantoja, José Miguel
A1 Muñoz San Martín, Sagrario
A1 Sebastián Franco, José Luis
AB This paper presents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and Noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting the parasitic elements of the small signal equivalent circuit.
PB IEEE
SN 0-7803-6646-8
YR 2001
FD 2001
LK https://hdl.handle.net/20.500.14352/60814
UL https://hdl.handle.net/20.500.14352/60814
LA eng
NO © IEEE. IEEE Instrumentation and Measurement Technology Conference (IMTC/2001) (18.2001.Budapest, Hungria).
DS Docta Complutense
RD 7 abr 2025