%0 Journal Article
%A Hidalgo Alcalde, Pedro
%A Cepeda Jiménez, C. M.
%A Ruano, O. A.
%A Carreño, F.
%T Development of CdZnTe doped with Bi for gamma radiation detection
%D 2010
%@ 1466-8033
%U https://hdl.handle.net/20.500.14352/44184
%X Bulk CZT crystals doped with Bi (1 x 10(19) at/cm(3)) have been grown by the Oscillatory Bridgman method, the growth velocity and the zinc concentration profile being improved by the insertion of a Pt tube acting as a cold finger. The stoichiometric uniformity was examined by energy dispersive X-ray analysis, and the zinc concentration was confirmed by inductively coupled plasma mass spectroscopy and cathodoluminescence measurements. The resistivity value was in the range of 8 x 10(8) Omega cm , being smaller for the passivated sample, which at the same time had counter device properties.
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