TY  - JOUR
AU  - Díaz-Guerra Viejo, Carlos
AU  - Piqueras de Noriega, Javier
PY  - 2004
DO  - 10.1088/0953-8984/16/2/026
SN  - 0953-8984
UR  - https://hdl.handle.net/20.500.14352/51149
T2  - Journal of Physics-Condensed Matter
AB  - Electrically active defects in epitaxial, n-type, 4H-SiC have been investigated by electron-beam-induced current (EBIC) in the scanning electron microscope. Several defects, mainly nanopipes, 6H polytype inclusions and triangular, carrot-like, defects...
LA  - eng
M2  - S217
PB  - IOP Publishing Ltd
KW  - Assisted Reverse Breakdown
KW  - Carrier Diffusion Length
KW  - P(+)N Junction Diodes
KW  - Epitaxial-Growth
KW  - Carbide Diodes
KW  - Silicon
KW  - Bulk
TI  - Electron-beam-induced current study of electrically active defects in 4H-SiC
TY  - journal article
VL  - 16
ER  -