RT Journal Article
T1 Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM
A1 Herrera, M.
A1 Cremades Rodríguez, Ana Isabel
A1 Stutzmann, M.
A1 Piqueras De Noriega, Francisco Javier
AB Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The distribution, density and size of the pinholes depend on the Mn doping concentration. AFM Leakage Current images (LC) show a defined contrast at the pinhole planes {101ī} in the sample with Mn concentration of 6.2 x 10_20 cm_-3. For the sample with an Mn concentration of 1.1 X 10_20 cm_-3, LC contrast appears around the pinholes, while no LC contrast was observed for sample with lower Mn concentration. CL measurements indicate that the samples exhibit strain related to Mn incorporation. In correlation with LC measurements, EBIC images show that pinholes are recombination sites. The combination of these techniques enabled us to analyze the Frenkel-Poole conduction in the samples and its relationship with the residual strain and the doping concentration in the films, which would exclude the mechanism of conduction through dislocations.
PB Elsevier Academic Press
SN 0749-6036
YR 2009
FD 2009-04
LK https://hdl.handle.net/20.500.14352/44005
UL https://hdl.handle.net/20.500.14352/44005
LA eng
NO Herrera, M., et al. «Electrical Properties of Pinholes in GaN:Mn Epitaxial Films Characterized by Conductive AFM». Superlattices and Microstructures, vol. 45, n.o 4-5, abril de 2009, pp. 435-43. DOI.org (Crossref), https://doi.org/10.1016/j.spmi.2008.12.023.
NO MEC
DS Docta Complutense
RD 10 abr 2025