TY  - JOUR
AU  - Herrera, M.
AU  - Cremades Rodríguez, Ana Isabel
AU  - Stutzmann, M.
AU  - Piqueras De Noriega, Francisco Javier
PY  - 2009
DO  - 10.1016/j.spmi.2008.12.023
SN  - 0749-6036
UR  - https://hdl.handle.net/20.500.14352/44005
T2  - Superlattices and Microstructures
AB  - Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The...
LA  - eng
M2  - 435
PB  - Elsevier Academic Press
KW  - Atomic-Force Microscopy
KW  - Reverse-Bias Leakage
KW  - V-Shaped Pits
KW  - Formation Mechanism
KW  - Schottky Contacts
KW  - Dislocations
KW  - Nanotubes
KW  - Diodes
KW  - Layers
TI  - Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM
TY  - journal article
VL  - 45
ER  -