%0 Journal Article
%A Wang, Mao
%A Berencén, Yonder
%A García Hemme, Eric
%A Prucnal, S.
%A Hübner, R.
%A Yuan, Ye
%A Xu, Chi
%A Rebohle, L.
%A Böttger, R.
%A Heller, R.
%A Schneider, H.
%A Skorupa, W.
%A Helm, M.
%A Zhou, Shengqiang
%T Extended infrared photoresponse in Te-hyperdoped Si at room temperature
%D 2018
%@ 2331-7019
%U https://hdl.handle.net/20.500.14352/101016
%X Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature.
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