RT Journal Article
T1 Extended infrared photoresponse in Te-hyperdoped Si at room temperature
A1 Wang, Mao
A1 Berencén, Yonder
A1 García Hemme, Eric
A1 Prucnal, S.
A1 Hübner, R.
A1 Yuan, Ye
A1 Xu, Chi
A1 Rebohle, L.
A1 Böttger, R.
A1 Heller, R.
A1 Schneider, H.
A1 Skorupa, W.
A1 Helm, M.
A1 Zhou, Shengqiang
AB Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature.
PB American Physical Society
SN 2331-7019
YR 2018
FD 2018-08-31
LK https://hdl.handle.net/20.500.14352/101016
UL https://hdl.handle.net/20.500.14352/101016
LA eng
NO Wang, M., Berencén, Y., García-Hemme, E., Prucnal, S., Hübner, R., Yuan, Y., ... & Zhou, S. (2018). Extended infrared photoresponse in Te-hyperdoped Si at room temperature. Physical Review Applied, 10(2), 024054.
NO Ministerio de Economía y Competitividad (España)
NO Structural Characterization Facilities at Ion Beam Center
NO Federal Ministry of Education & Research
NO Alexander von Humboldt Foundation
NO Helmholtz Association
NO China Scholarship Council
DS Docta Complutense
RD 13 abr 2025