TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - Olea Ariza, Javier
AU  - Prado Millán, Álvaro del
AU  - San Andrés Serrano, Enrique
PY  - 2006
DO  - 10.1016/j.mssp.2006.10.018
SN  - 1369-8001
UR  - https://hdl.handle.net/20.500.14352/51110
T2  - Materials Science in Semiconductor Processing
AB  - The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure reactive sputtering (HPRS) have been studied as a function of the Ar/O-2 ratio in the sputtering gas mixture. Transmission electron microscopy shows...
LA  - eng
M2  - 1020
PB  - Elsevier Science Ltd
KW  - Gate Dielectrics
KW  - Silicon
KW  - Zirconium
KW  - Interface
KW  - States.
TI  - Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O-2 ratios
TY  - journal article
VL  - 9
ER  -