%0 Journal Article
%A Plaza, J. L.
%A Hidalgo Alcalde, Pedro
%A Méndez Martín, María Bianchi
%A Piqueras De Noriega, Francisco Javier
%A Castaño, J. L.
%A Dieguez, E.
%T Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique
%D 1999
%@ 0022-0248
%U https://hdl.handle.net/20.500.14352/58947
%X The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.
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