RT Journal Article
T1 Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique
A1 Plaza, J. L.
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Castaño, J. L.
A1 Dieguez, E.
AB The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.
PB Elsever science BV
SN 0022-0248
YR 1999
FD 1999-03
LK https://hdl.handle.net/20.500.14352/58947
UL https://hdl.handle.net/20.500.14352/58947
LA eng
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NO © 1999 Elsevier Science B.V.Conference on Crystal Growth, held in Conjunction with the 10th International Conference on Vapor Growth and Epitaxy (ICCG-12/ICVGE-10) (12. 1998. Jerusalen).This work has been supported by CICYT (ESP95-0148 and 95-0086-OP) and DGES PB96-0639 (CICYT, Spain).
NO CICYT, Spain
NO DGES
DS Docta Complutense
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