RT Journal Article
T1 Electronic structure and vertical transport in random dimer GaAs-Al_xGa_(1-x)As superlattices
A1 Parisini, A.
A1 Tarricone, L.
A1 Bellani, V.
A1 Parravicini, G. B.
A1 Díaz García, Elena
A1 Domínguez-Adame Acosta, Francisco
A1 Hey, R.
AB We report a systematic study of several GaAs-AlxGa1-xAs semiconductor superlattices grown by molecular-beam epitaxy specifically designed to explore the existence of extended states in random dimer superlattices. We have confirmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1999)] with much additional evidence that allows us to lay claim to a clear-cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhibit the localization effects of the disorder.
PB American Physical Society
SN 1098-0121
YR 2001
FD 2001-01-15
LK https://hdl.handle.net/20.500.14352/59352
UL https://hdl.handle.net/20.500.14352/59352
LA eng
NO © 2001 The American Physical Society.We are grateful to J. C. Flores, K. Fujiwara, G. Guizzetti, M. Hilke, C. Kanyinda-Malu, A. Stella, and D. Tsui for their enlightening discussions. Work in Italy has been supported by the INFM Network ‘‘Fisica e Tecnologia dei Semiconduttori III-V’’ and in Madrid by DGES under Project MAT2000-0734.
NO DGES
NO INFM Network ‘‘Fisica e Tecnologia dei Semiconduttori III-V’’
DS Docta Complutense
RD 14 dic 2025