TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro del
PY  - 2008
DO  - 10.1063/1.3013441
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/51098
T2  - Journal of Applied Physics
AB  - Al/HfO(2)/SiN(x):H/n-Si metal-insulator-semiconductor capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron cyclotron resonance assisted chemical vapor...
LA  - eng
PB  - American Institute of Physics
KW  - Kappa Gate Dielectrics
KW  - Oxide Thin-Films
KW  - Crystallization
KW  - Transistors
KW  - Transients
KW  - Deposition
KW  - Hydrogen
KW  - Model.
TI  - Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon
TY  - journal article
VL  - 104
ER  -