%0 Journal Article
%A Méndez Martín, María Bianchi
%A Piqueras De Noriega, Francisco Javier
%A Domínguez-Adame Acosta, Francisco
%A De Diego, N.
%T Spatial-distribution of defects in GaAs: Te wafers studied by cathodoluminescence
%D 1988
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/59001
%X Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution  of defects in GaAs: Te wafers. Dislocation  density and near-band-edge CL profiles along the wafer have different shapes. positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higer vacancy concentration  has been detected in the Te-doped samples relative  to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.
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